Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

Publisher： Edp Sciences

E-ISSN： 2261-236x|26|issue|03008-03008

ISSN： 2261-236x

Source： MATEC Web of conference, Vol.26, Iss.issue, 2015-10, pp. : 03008-03008

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