A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction

Author: Chang Sheng-Ren   Chen Hsin  

Publisher: MDPI

E-ISSN: 1424-8220|9|10|8336-8348

ISSN: 1424-8220

Source: Sensors, Vol.9, Iss.10, 2009-10, pp. : 8336-8348

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract