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Initial Processes of Atomic Layer Deposition of Al₂O₃ on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Author： Jevasuwan Wipakorn Urabe Yuji Maeda Tatsuro Miyata Noriyuki Yasuda Tetsuji Yamada Hisashi Hata Masahiko Taoka Noriyuki Takenaka Mitsuru Takagi Shinichi

Publisher： MDPI

E-ISSN： 1996-1944|5|3|404-414

ISSN： 1996-1944

Source： Materials, Vol.5, Iss.3, 2012-03, pp. : 404-414

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