Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Author: Esqueda Ivan S.   Cress Cory D.   Anderson Travis J.   Ahlbin Jonathan R.   Bajura Michael   Fritze Michael   Moon Jeong-S.  

Publisher: MDPI

E-ISSN: 2079-9292|2|3|234-245

ISSN: 2079-9292

Source: Electronics, Vol.2, Iss.3, 2013-07, pp. : 234-245

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Abstract