A quantum correction based model for study of quantum confinement effects in nano-scale carbon nanotube field-effect transistor (CNTFET) under inversion condition

Author： Singh Ajay Kumar   Kumar B. Naresh   Sheng Gan Che  

Publisher： Edp Sciences

E-ISSN： 1286-0050|78|1|10101-10101

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.78, Iss.1, 2017-04, pp. : 10101-10101

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Fabrication of ozone gas sensor based on FeOOH/single walled carbon nanotube-modified field effect transistor

By Doroodmand Mohammad Mahdi  

International Journal of Environmental and Analytical Chemistry, Vol. 93, Iss. 9, 2013-08 ,pp. : 946-958

Taylor & Francis Ltd

Access to resources Recommend Favorite

Field-Effect Phototransistors Based on Graphene-Quantum Dot Hybrids

By  

MATEC Web of conference, Vol. 44, Iss. issue, 2016-03 ,pp. : 01033-01033

Edp Sciences

Access to resources Recommend Favorite

Quantum transport properties of carbon nanotube with topologic defects

By Zeng H.   Hu H. F.   Wei J. W.   Yang W. W.   Peng P.  

EPJ Applied Physics (The), Vol. 43, Iss. 1, 2008-05 ,pp. : 19-22

Edp Sciences

Access to resources Recommend Favorite

Graphene field-effect transistor application for flow sensing

By Łuszczek Maciej  

EPJ Web of Conference, Vol. 143, Iss. issue, 2017-05 ,pp. : 02068-02068

Edp Sciences

Access to resources Recommend Favorite

An analytical model for the organic field-effect transistor in the depletion mode. Application to sexithiophene films and single crystals

By Horowitz G.   Hajlaoui R.   Kouki F.  

EPJ Applied Physics (The), Vol. 1, Iss. 3, 2010-03 ,pp. : 361-367

Edp Sciences

Access to resources Recommend Favorite