Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2017|897|681-684
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 681-684
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Cryogenic to High Temperature Exploration of 4H-SiC W-SBD
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
High Temperature Nitridation of 4H-SiC MOSFETs
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
4H-SiC PIN Diode as High Temperature Multifunction Sensor
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Total Dose Effects on 4H-SiC Bipolar Junction Transistors
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :