Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 347-350

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Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 237-240

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Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 357-360

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Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 111-114

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Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 323-326

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