Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2017|897|181-184
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 181-184
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
LACBED study of extended defects in 4H-SiC
By Texier M. Regula G. Lancin M. Pichaud B.
Philosophical Magazine Letters, Vol. 86, Iss. 9, 2006-09 ,pp. :
Access to resources
Recommend
4H-SiC Defects Analysis by Micro Raman Spectroscopy
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Three-Dimensional Imaging of Extended Defects in 4H-SiC
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Ion Implantation Defects in 4H-SiC DIMOSFET
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :