DLTS Study on Al⁺ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

E-ISSN： 1662-9752|2017|897|279-282

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 279-282

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