Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|557-560

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 557-560

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Cryogenic Characterization of Commercial SiC Power MOSFETs

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 777-780

Trans Tech Publications

Access to resources Recommend Favorite

Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 545-548

Trans Tech Publications

Access to resources Recommend Favorite

Readiness of SiC MOSFETs for Aerospace and Industrial Applications

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 894-899

Trans Tech Publications

Access to resources Recommend Favorite

Short-Circuit Robustness Testing of SiC MOSFETs

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 525-528

Trans Tech Publications

Access to resources Recommend Favorite

Avalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETs

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 872-875

Trans Tech Publications

Access to resources Recommend Favorite