Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs

E-ISSN： 1662-9752|2017|897|115-118

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 115-118

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