Depth Profile of Doping Concentration in Thick (gt; 100 μm) and Low-Doped (lt; 4 × 10¹⁴ cm^-3) 4H-SiC Epilayers

E-ISSN： 1662-9752|2017|897|83-86

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 83-86

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