Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2017|897|689-692
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 689-692
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Performance Comparison of Circuits for Pole‐Mounted STATCOM Using SiC Devices
ELECTRICAL ENGINEERING IN JAPAN, Vol. 192, Iss. 3, 2015-08 ,pp. :
Access to resources
Recommend
Using SiC MOSFET’s Full Potential – Switching Faster than 200 kV/μs
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
The Effect of Incomplete Ionization on SiC Devices during High Speed Switching
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
SiC Power Devices in Impedance Source Converters
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :