CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut

E-ISSN： 1662-9752|2017|897|731-734

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 731-734

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Stranski-Krastanov growth of Si on SiC(0001)

By Fissel A. Akhtariev R. Richter W.

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 42-45

Elsevier

Access to resources Recommend Favorite

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC(0001) and SiC(000-1) Substrates

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 1121-1124

Trans Tech Publications

Access to resources Recommend Favorite

Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 957-960

Trans Tech Publications

Access to resources Recommend Favorite

Polarity Inversion of SiC(0001) during the Al Doped PVT Growth

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 73-76

Trans Tech Publications

Access to resources Recommend Favorite

Growth and characterization of SiC layers obtained by microwave-CVD

By Mandracci P. Ferrero S. Cicero G. Giorgis F. Pirri C.F. Barucca G. Reitano R. Musumeci P. Calcagno L. Foti G.

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 169-171

Elsevier

Access to resources Recommend Favorite