Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

Author： Chen Kai-Huang Tsai Tsung-Ming Cheng Chien-Min Huang Shou-Jen Chang Kuan-Chang Liang Shu-Ping Young Tai-Fa

Publisher： MDPI

E-ISSN： 1996-1944|11|1|43-43

ISSN： 1996-1944

Source： Materials, Vol.11, Iss.1, 2017-12, pp. : 43-43

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