Analysis of Dark Current in BRITE Nanostellite CCD Sensors †

Publisher： MDPI

E-ISSN： 1424-8220|18|2|479-479

ISSN： 1424-8220

Source： Sensors, Vol.18, Iss.2, 2018-02, pp. : 479-479

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

The BRightest Target Explorer (BRITE) is the pioneering nanosatellite mission dedicated for photometric observations of the brightest stars in the sky. The BRITE charge coupled device (CCD) sensors are poorly shielded against extensive flux of energetic particles which constantly induce defects in the silicon lattice. In this paper we investigate the temporal evolution of the generation of the dark current in the BRITE CCDs over almost four years after launch. Utilizing several steps of image processing and employing normalization of the results, it was possible to obtain useful information about the progress of thermal activity in the sensors. The outcomes show a clear and consistent linear increase of induced damage despite the fact that only about 0.14% of CCD pixels were probed. By performing the analysis of temperature dependencies of the dark current, we identified the observed defects as phosphorus-vacancy (PV) pairs, which are common in proton irradiated CCD matrices. Moreover, the Meyer-Neldel empirical rule was confirmed in our dark current data, yielding E M N = 24.8 meV for proton-induced PV defects.