Barrier height inhomogeneities in Cu-nMoSe₂ Schottky diode

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EPJ Applied Physics (The), Vol. 56, Iss. 1, 2011-09 ,pp. : 10103-10103

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Analysis of barrier height inhomogeneities in Al-pSnSe Schottky diode

By Sumesh C.K.   Patel K.D.  

EPJ Applied Physics (The), Vol. 59, Iss. 1, 2012-07 ,pp. : 10103-10103

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Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

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EPJ Applied Physics (The), Vol. 55, Iss. 3, 2011-08 ,pp. : 30101-30101

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DC and RF characteristics of bilayer Schottky metal contact on n-GaN Schottky diode

By Munir T.   Abdul Aziz A.   Abdullah M.J.   Ain M.F.  

EPJ Applied Physics (The), Vol. 60, Iss. 1, 2012-10 ,pp. : 10103-10103

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Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode

By Rabehi Abdelaziz   Amrani Mohamed   Benamara Zineb   Akkal Boudali   Hatem-Kacha Arslane   Robert-Goumet Christine   Monier Guillaume   Gruzza Bernard  

EPJ Applied Physics (The), Vol. 72, Iss. 1, 2015-09 ,pp. : 10102-10102

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