Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|92-95

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 92-95

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