Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|924|967-970
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 967-970
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Analysis of Forward Surge Performance of SiC Schottky Diodes
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :