Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2018|924|727-730
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 727-730
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Short-Circuit Capability of SiC Cascode
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Access to resources
Recommend
Short-Circuit Robustness of SiC Trench MOSFETs
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
An Experimental Demonstration of Short Circuit Protection of SiC Devices
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
TCAD Modeling of a 1200 V SiC MOSFET
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :