1MHz Switching Operation of 1200V Full SiC Power Module

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|832-835

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 832-835

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

TCAD Modeling of a 1200 V SiC MOSFET

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 689-692

Trans Tech Publications

Access to resources Recommend Favorite

Module and System Considerations to Maximize Performance Advantages of SiC Power Devices

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 883-886

Trans Tech Publications

Access to resources Recommend Favorite

Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 697-702

Trans Tech Publications

Access to resources Recommend Favorite

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 854-857

Trans Tech Publications

Access to resources Recommend Favorite

Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 711-714

Trans Tech Publications

Access to resources Recommend Favorite