Electrical Properties of Schottky-Diodes Based on B Doped Diamond

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|931-934

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 931-934

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 605-608

Trans Tech Publications

Access to resources Recommend Favorite

Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 419-422

Trans Tech Publications

Access to resources Recommend Favorite

Analysis of Forward Surge Performance of SiC Schottky Diodes

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 621-624

Trans Tech Publications

Access to resources Recommend Favorite

Morphological, Structural, Electrical and Optical Properties of Copper-Doped Zinc Oxide Films Deposited by Spray Pyrolysis

By  

Materials Science Forum, Vol. 2018, Iss. 930, 2018-10 ,pp. : 79-84

Trans Tech Publications

Access to resources Recommend Favorite

Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 663-666

Trans Tech Publications

Access to resources Recommend Favorite