Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

E-ISSN： 1662-9752|2018|924|568-572

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 568-572

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 440-443

Trans Tech Publications

Access to resources Recommend Favorite

Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (gt;12MeV) of Al⁺ and B⁺

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 573-576

Trans Tech Publications

Access to resources Recommend Favorite

Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 858-861

Trans Tech Publications

Access to resources Recommend Favorite

Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 988-992

Trans Tech Publications

Access to resources Recommend Favorite

Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 605-608

Trans Tech Publications

Access to resources Recommend Favorite