650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|822-826

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 822-826

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 684-688

Trans Tech Publications

Access to resources Recommend Favorite

Vertical Tri-Gate Power MOSFETs in 4H-SiC

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 680-683

Trans Tech Publications

Access to resources Recommend Favorite

Comparison of 3C-SiC and 4H-SiC Power MOSFETs

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 774-777

Trans Tech Publications

Access to resources Recommend Favorite

4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 703-706

Trans Tech Publications

Access to resources Recommend Favorite

H3TRB Test on 650 V SiC JBS Diodes

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 581-584

Trans Tech Publications

Access to resources Recommend Favorite