Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|924|778-781
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 778-781
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Impact of Cell Layout and Device Structure on On-Voltage Reduction of 6.5-kV n-Channel SiC IGBTs
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
TCAD Modeling of a 1200 V SiC MOSFET
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :