

Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|924|782-785
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 782-785
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content


Short-Circuit Robustness of SiC Trench MOSFETs
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :


Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :


Short-Circuit Capability of SiC Cascode
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :


Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :


1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :