Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|924|373-376
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 373-376
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :