Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2018|924|349-352

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 349-352

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Abstract