Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures

Publisher： Edp Sciences

E-ISSN： 2100-014x|185|issue|07005-07005

ISSN： 2100-014x

Source： EPJ Web of Conference, Vol.185, Iss.issue, 2018-07, pp. : 07005-07005

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Abstract

The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented. The monolithic structure consisted of a gallium arsenide substrate with deposited nickel layer (GaAs-Ni), and the composite structure contained a semiconductor substrate with an amorphous magnetic alloy (GaAs-Metglas) ribbon glued on one side. A quality factor Q ≈ 23500 and magnetoelectric coefficient of 316 V/Oe.cm were achieved at the frequency of planar acoustic oscillations for GaAs-Ni structure at room temperature.

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