On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

Author: Efthymiou Loizos   Camuso Gianluca   Longobardi Giorgia   Chien Terry   Chen Max   Udrea Florin  

Publisher: MDPI

E-ISSN: 1996-1073|10|3|407-407

ISSN: 1996-1073

Source: Energies, Vol.10, Iss.3, 2017-03, pp. : 407-407

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Abstract