Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

Author: Kim Sungjun   Chang Yao-Feng   Kim Min-Hwi   Kim Tae-Hyeon   Kim Yoon   Park Byung-Gook  

Publisher: MDPI

E-ISSN: 1996-1944|10|5|459-459

ISSN: 1996-1944

Source: Materials, Vol.10, Iss.5, 2017-04, pp. : 459-459

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Abstract

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant concentration (As ion > 1019 cm−3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm−3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.