A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor

Author: Cai Wei   Zhu Zhennan   Wei Jinglin   Fang Zhiqiang   Ning Honglong   Zheng Zeke   Zhou Shangxiong   Yao Rihui   Peng Junbiao   Lu Xubing  

Publisher: MDPI

E-ISSN: 1996-1944|10|8|972-972

ISSN: 1996-1944

Source: Materials, Vol.10, Iss.8, 2017-08, pp. : 972-972

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Abstract