Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

Author： Hsu Ming-Hung   Chang Sheng-Po   Chang Shoou-Jinn   Wu Wei-Ting   Li Jyun-Yi  

Publisher： MDPI

E-ISSN： 2079-4991|7|7|156-156

ISSN： 2079-4991

Source： Nanomaterials, Vol.7, Iss.7, 2017-06, pp. : 156-156

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