Nanoscale Etching of GaAs and InP in Acidic H₂O₂ Solution: A Striking Contrast in Kinetics and Surface Chemistry

E-ISSN： 1662-9779|2018|282|48-51

ISSN： 1012-0394

Source： Solid State Phenomena, Vol.2018, Iss.282, 2018-10, pp. : 48-51

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