Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices

Author： Özden Şadan   Güllü Ömer   Pakma Osman  

Publisher： Edp Sciences

E-ISSN： 1286-0050|82|2|20101-20101

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.82, Iss.2, 2018-08, pp. : 20101-20101

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Si and SiC Schottky diodes in smart power circuits: a comparative study by I–V–T and C–V measurements

By  

Journal of Physics: Conference Series , Vol. 10, Iss. 1, 2005-01 ,pp. : 11-14

IOP Publishing

Access to resources Recommend Favorite

Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder

By Hui Wang   Cheng-Feng Yan   Hai-Kuan Kong   Jian-Jun Chen   Jun Xin   Er-Wei Shi  

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 27505-27507

IOP Publishing

Access to resources Recommend Favorite

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

By  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 46, 2015-11 ,pp. : 465306-465312

IOP Publishing

Access to resources Recommend Favorite

On the evaluation theory of C-V measurements on narrow gap semiconductor MIS structures

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 2, 1987-02 ,pp. : 107-111

Edp Sciences

Access to resources Recommend Favorite

Room temperature optical thermometry based on the luminescence of the SiV defects in diamond

By  

EPJ Web of Conference, Vol. 190, Iss. issue, 2018-09 ,pp. : 04024-04024

Edp Sciences

Access to resources Recommend Favorite