Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf0.5Zr0.5O2/ TiN/SiO2/Si and TiN/HfXAl1-XOY/Pt/SiO2/Si Test Structures Obtained on the National Technological Basis

Publisher： Trans Tech Publications

E-ISSN： 1662-9507|2018|386|172-177

ISSN： 1012-0386

Source： Defect and Diffusion Forum, Vol.2018, Iss.386, 2018-11, pp. : 172-177

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