Generating dynamic microwave chaos in self-oscillating ring system based on complementary metal-oxide-semiconductor structure

By Dmitriev A.   Efremova E.   Nikishov A.  

Technical Physics Letters, Vol. 36, Iss. 5, 2010-05 ,pp. : 430-432

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process

By Hinakura Yosuke   Terada Yosuke   Tamura Takuya   Baba Toshihiko  

Photonics, Vol. 3, Iss. 2, 2016-04 ,pp. : 17-17

MDPI

Access to resources Recommend Favorite

The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

By Da-Wei Li   Jun-Rui Qin   Shu-Ming Chen  

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 29402-29405

IOP Publishing

Access to resources Recommend Favorite

Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

By Boufouss El Hafed   Francis Laurent A.   Kilchytska Valeriya   Gérard Pierre   Simon Pascal   Flandre Denis  

Sensors, Vol. 13, Iss. 12, 2013-12 ,pp. : 17265-17280

MDPI

Access to resources Recommend Favorite

Interaction of hydrogen with a metal-oxide-semiconductor structure containing an additional solid-electrolyte layer

By Filippov V.   Vasil’ev A.   Terent’ev A.   Morits V.  

Technical Physics Letters, Vol. 25, Iss. 9, 1999-09 ,pp. : 729-730

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite