Composition, structure and morphology of Al1−xInxN thin films grown on Al1−yGayN templates with different GaN contents

E-ISSN： 1361-6463|48|1|15103-15111

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.1, 2015-01, pp. : 15103-15111

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States

By Xiang-Xu Feng Nai-Xin Liu Ning Zhang Tong-Bo Wei Jun-Xi Wang Jin-Min Li

Chinese Physics Letters, Vol. 31, Iss. 5, 2014-05 ,pp. : 56801-56804

IOP Publishing

Access to resources Recommend Favorite

Intersubband transitions in In_xAl_{(1 − x)}N/In_yGa_{(1 − y)}N quantum well operating at 1.55 μm

By Dakhlaoui Hassen

Chinese Physics B, Vol. 23, Iss. 9, 2014-09 ,pp. : 97304-97308

IOP Publishing

Access to resources Recommend Favorite

Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al_xGa_1−xN/Al_yGa_1−yN Superlattices

By Lei Pan Jin-Yu Ni Xin-Xin Yu Xun Dong Da-Qing Peng Chuan-Hao Li Zhong-Hui Li Tang-Sheng Chen

Chinese Physics Letters, Vol. 32, Iss. 5, 2015-05 ,pp. : 58103-58106

IOP Publishing

Access to resources Recommend Favorite

Pressure dependence of energy band gaps forAlxGa1 - xN,InxGa1 - xN andInxAl1 - xN

New Journal of Physics, Vol. 4, Iss. 1, 2002-11 ,pp. : 1368-1382

IOP Publishing

Access to resources Recommend Favorite

Environment About Indium in Ga1-xInxN from In and Ga K-Edge XAFS

Le Journal de Physique IV, Vol. 7, Iss. C2, 1997-04 ,pp. : C2-1253-C2-1254

Edp Sciences

Access to resources Recommend Favorite