Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Publisher： IOP Publishing

E-ISSN： 1741-3540|31|12|128101-128105

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.31, Iss.12, 2014-12, pp. : 128101-128105

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Low-temperature growth of GaAs with high quality by metalorganic vapor phase epitaxy

By  

Journal of Physics: Conference Series , Vol. 165, Iss. 1, 2009-05 ,pp. : 115-118

IOP Publishing

Access to resources Recommend Favorite

VERY RAPID GROWTH OF HIGH QUALITY GaAs, InP AND RELATED III-V COMPOUNDS

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-689-C4-692

Edp Sciences

Access to resources Recommend Favorite

Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

By  

Journal of Physics: Conference Series , Vol. 276, Iss. 1, 2011-02 ,pp. : 599-610

IOP Publishing

Access to resources Recommend Favorite

Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a √3 × √3-Ga Buffer Layer

By  

Chinese Physics Letters, Vol. 31, Iss. 12, 2014-12 ,pp. : 128102-128105

IOP Publishing

Access to resources Recommend Favorite

The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD

By  

Journal of Physics: Conference Series , Vol. 276, Iss. 1, 2011-02 ,pp. : 1180-1187

IOP Publishing

Access to resources Recommend Favorite