Laser direct synthesis of silicon nanowire field effect transistors

E-ISSN： 1361-6528|26|5|55306-55310

ISSN： 0957-4484

Source： Nanotechnology, Vol.26, Iss.5, 2015-02, pp. : 55306-55310

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Optimized operation of silicon nanowire field effect transistor sensors

Nanotechnology, Vol. 25, Iss. 50, 2014-12 ,pp. : 505501-505507

IOP Publishing

Access to resources Recommend Favorite

The Effect of Channel Width on the Performance of AlGaN/GaN Nanowire Field Effect Transistors

By Kang Min-Seok Lee Jung-Ho Lee Hyung-Seok Koo Sang-Mo

Journal of Nanoscience and Nanotechnology, Vol. 13, Iss. 10, 2013-10 ,pp. : 7042-7045

American Scientific Publishers

Access to resources Recommend Favorite

High intensity induced photocurrent polarity switching in lead sulfide nanowire field effect transistors

By Yu Dong Yang Yiming Peng Xingyue

Nanotechnology, Vol. 25, Iss. 19, 2014-05 ,pp. : 195202-195209

IOP Publishing

Access to resources Recommend Favorite

Investigation of the Role of Aspect Ratio for the Design of Si-Nanowire Field-Effect-Transistors in Ballistic Regime

By Chowdhury Basudev Nag Chattopadhyay Sanatan

Nanoscience and Nanotechnology Letters, Vol. 5, Iss. 10, 2013-10 ,pp. : 1087-1090

American Scientific Publishers

Access to resources Recommend Favorite

Hydrogen plasma-mediated modification of the electrical transport properties of ZnO nanowire field effect transistors

Nanotechnology, Vol. 26, Iss. 12, 2015-03 ,pp. : 125202-125209

IOP Publishing

Access to resources Recommend Favorite