Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells

By Cedola Ariel   Cappelluti Federica   Gioannini Mariangela  

Semiconductor Science and Technology, Vol. 31, Iss. 2, 2016-02 ,pp. : 25018-25029

IOP Publishing

Access to resources Recommend Favorite

Matrix elements of intraband transitions in quantum dot intermediate band solar cells: the influence of quantum dot presence on the extended-state electron wave-functions

By Nozawa Tomohiro   Arakawa Yasuhiko  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45014-45018

IOP Publishing

Access to resources Recommend Favorite

The effect of multi-intermediate bands on the behavior of an InAs_1−xN_x/GaAs_1−ySb_y quantum dot solar cell

By Aly Abou El-Maaty M.   Nasr A.  

Journal of Semiconductors, Vol. 36, Iss. 4, 2015-04 ,pp. : 42001-42006

IOP Publishing

Access to resources Recommend Favorite

Annealing behavior of InAs/GaAs quantum dot structures

By Wang Z.   Feng S.   Lu Z.   Zhao Q.   Yang X.   Chen Z.   Xu Z.   Zheng H.  

Journal of Electronic Materials, Vol. 27, Iss. 2, 1998-02 ,pp. : 59-61

Springer Publishing Company

Access to resources Recommend Favorite

Complex behavior of the conductance of quantum wires with a long quantum-dot array

By Dominguez-Adame F.   Gomez I.   Orellana P.A.   Ladron de Guevara M.L.  

Microelectronics, Vol. 35, Iss. 1, 2004-01 ,pp. : 87-89

Elsevier

Access to resources Recommend Favorite