Publisher: IOP Publishing
E-ISSN: 1361-6641|30|3|35009-35018
ISSN: 0268-1242
Source: Semiconductor Science and Technology, Vol.30, Iss.3, 2015-03, pp. : 35009-35018
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Nitrogen doped p-type ZnO films and p-n homojunction
Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. :
By Santos-Ortiz Reinaldo Sun Wei Nyandoto Gilbert Du Jincheng Shepherd Nigel D
Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. :
CL from ZnO nanowires and microneedles Co-doped with N and Mn
By Herrera M Morales A Díaz J A
Semiconductor Science and Technology, Vol. 29, Iss. 5, 2014-05 ,pp. :
Light-Harvesting in n -ZnO/ p -Silicon Heterojunctions
By Li L.
Journal of Electronic Materials, Vol. 39, Iss. 11, 2010-11 ,pp. :