Publisher: IOP Publishing
E-ISSN: 1741-4199|24|11|116401-116404
ISSN: 1674-1056
Source: Chinese Physics B, Vol.24, Iss.11, 2015-11, pp. : 116401-116404
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
In Situ Electrical Resistivity and Hall Effect Measurement of β-HgS under High Pressure
Chinese Physics Letters, Vol. 32, Iss. 1, 2015-01 ,pp. :
Inverse spin Hall effect in a HgTe quantum well
By Luo Wei Deng W. Y. Chen M. N. Sheng L. Xing D. Y.
EPL (EUROPHYSICS LETTERS), Vol. 113, Iss. 5, 2016-04 ,pp. :
High-Pressure High-Temperature XAFS Investigation on HgTe
Le Journal de Physique IV, Vol. 7, Iss. C2, 1997-04 ,pp. :