Incorporation of Li dopant into Cu2ZnSnSe4 photovoltaic absorber: hybrid-functional calculations

E-ISSN： 1361-6463|48|48|482001-482004

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.48, 2015-12, pp. : 482001-482004

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

Journal of Physics D: Applied Physics, Vol. 48, Iss. 47, 2015-12 ,pp. : 475109-475115

IOP Publishing

Access to resources Recommend Favorite

Improved photovoltaic and grain boundary characteristics of single elementary target-sputtered Cu₂ZnSnSe₄ thin films by post sulfurization/selenization process

Journal of Physics D: Applied Physics, Vol. 48, Iss. 24, 2015-06 ,pp. : 245103-245107

IOP Publishing

Access to resources Recommend Favorite

Study of alternative back contacts for thin film Cu2ZnSnSe4-based solar cells

Journal of Physics D: Applied Physics, Vol. 48, Iss. 3, 2015-01 ,pp. : 35103-35111

IOP Publishing

Access to resources Recommend Favorite

Cu₂ZnSnSe₄ quantum dots with controllable size and quantum confinement effect

By Zong Kai Lu SiHeng Wang Hao Sun YuXiu Liu JingBing Yan Hui

Journal of Nanoparticle Research, Vol. 15, Iss. 9, 2013-09 ,pp. : 1-7

Springer Publishing Company

Access to resources Recommend Favorite

Retraction Note: Cu₂ZnSnSe₄ quantum dots with controllable size and quantum confinement effect

By Zong Kai Lu SiHeng Wang Hao Sun YuXiu Liu JingBing Yan Hui

Journal of Nanoparticle Research, Vol. 15, Iss. 12, 2013-12 ,pp. : 1-1

Springer Publishing Company

Access to resources Recommend Favorite