Publisher： Trans Tech Publications
E-ISSN： 1662-9779|2014|219|78-80
ISSN： 1012-0394
Source： Solid State Phenomena, Vol.2014, Iss.219, 2014-01, pp. : 78-80
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
As the demand for greater speed in semiconductor devices continues, a typical method of increasing charge mobility is to maximise the silicon strain at the depletion region in p-type transistors through the implementation of “Sigma Cavity” structures in the bulk silicon on either side of the gate structure. These structures, when filled, exhibit a uniaxial strain in the depletion region thus, increasing the charge transport speed [1]. The shape of the Sigma Cavity structure is important in maximising the strain in this region, thus strict control of the shape dimensions is imperative to the electrical performance of the device.
Related content
Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process
Solid State Phenomena, Vol. 2016, Iss. 255, 2016-10 ,pp. :
Access to resources
Recommend
Advanced Monitoring of TMAH Solution
Solid State Phenomena, Vol. 2014, Iss. 219, 2014-01 ,pp. :
Wet Anisotropic Etching Characteristics of Si{100} in TMAH+Triton at near the Boiling Point
Key Engineering Materials, Vol. 2015, Iss. 645, 2015-06 ,pp. :
Wet Selective SiGe Etch to Enable Ge Nanowire Formation
Solid State Phenomena, Vol. 2016, Iss. 255, 2016-10 ,pp. :
By Lee Woei-Shyan Chiu Chien-Cheng
Metallurgical and Materials Transactions A, Vol. 37, Iss. 12, 2006-12 ,pp. :