Capacitance Transient Spectroscopy Measurements on High-k Metal Gate Field Effect Transistors Fabricated Using 28nm Technology Node

Publisher： Trans Tech Publications

E-ISSN： 1662-9779|2015|242|459-465

ISSN： 1012-0394

Source： Solid State Phenomena, Vol.2015, Iss.242, 2016-02, pp. : 459-8

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