Publisher： Trans Tech Publications
E-ISSN： 1662-7482|2015|764|515-520
ISSN： 1660-9336
Source： Applied Mechanics and Materials, Vol.2015, Iss.764, 2015-06, pp. : 515-520
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Enhancement-Mode GaN MOS-HEMT with Quaternary InAlGaN-Barrier
Applied Mechanics and Materials, Vol. 2017, Iss. 870, 2017-10 ,pp. :
Access to resources
Recommend
Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications
Applied Mechanics and Materials, Vol. 2015, Iss. 815, 2015-12 ,pp. :
Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices
Applied Mechanics and Materials, Vol. 2015, Iss. 764, 2015-06 ,pp. :
On Creation of Energy-Saving Hydraulic Impact Devices
Applied Mechanics and Materials, Vol. 2015, Iss. 756, 2015-05 ,pp. :