Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

Author： Whitcher T J Woon K L Wong W S Chanlek N Nakajima H Saisopa T Songsiriritthigul P

E-ISSN： 1361-6463|49|7|75104-75110

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.49, Iss.7, 2016-02, pp. : 75104-75110

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