Author: Suge Yue Xiaolin Zhang Yuanfu Zhao Lin Liu Hanning Wang
Publisher: IOP Publishing
ISSN: 1674-4926
Source: Journal of Semiconductors, Vol.36, Iss.11, 2015-11, pp. : 111002-111011
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Modeling neutron ionization effects on high-density CMOS circuit elements
By Zebrev G.
Russian Microelectronics, Vol. 35, Iss. 3, 2006-05 ,pp. :