Substitutionally doped phosphorene: electronic properties and gas sensing

Author： Suvansinpan Nawat Hussain Fayyaz Zhang Gang Cai Yongqing Zhang Yong-Wei Suvansinpan Nawat

E-ISSN： 1361-6528|27|6|65708-65718

ISSN： 0957-4484

Source： Nanotechnology, Vol.27, Iss.6, 2016-02, pp. : 65708-65718

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Small molecules make big differences: molecular doping effects on electronic and optical properties of phosphorene

Nanotechnology, Vol. 26, Iss. 9, 2015-03 ,pp. : 95201-95209

IOP Publishing

Access to resources Recommend Favorite

The structure and elastic properties of phosphorene edges

By Sorkin V Zhang Y W

Nanotechnology, Vol. 26, Iss. 23, 2015-06 ,pp. : 235707-235718

IOP Publishing

Access to resources Recommend Favorite

Geometric and electronic structures of mono- and di-vacancies in phosphorene

By Hu Ting Dong Jinming

Nanotechnology, Vol. 26, Iss. 6, 2015-02 ,pp. : 65705-65713

IOP Publishing

Access to resources Recommend Favorite

INTERFACE STUDIES AND ELECTRONIC PROPERTIES OF SILICON BASED Nd-DOPED BISMUTH TITANATE

By Zang Yongyuan Xie Dan Xiao Yehui Ruan Yong Ren Tianling Liu Litian

Integrated Ferroelectrics, Vol. 98, Iss. 1, 2008-01 ,pp. : 90-96

Taylor & Francis Ltd

Access to resources Recommend Favorite

Investigation on the electronic and optical properties of Al-doped ZnO nanostructures

By Zhang Liqiang Guo Yi Tang Yunqing Liu Dongjing

International Journal of Materials and Structural Integrity, Vol. 7, Iss. 4, 2013-11 ,pp. : 251-259

Inderscience Publishers

Access to resources Recommend Favorite